Technische Details RTQ045N03TR
- MOSFET, N, 30V, 4.5A
- Transistor Type:ESD Protection Type
- Transistor Polarity:N
- Typ Voltage Vds:30V
- Cont Current Id:4.5A
- On State Resistance:30mohm
- Voltage Vgs Rds on Measurement:4.5V
- Typ Voltage Vgs th:1.5V
- Case Style:TSMT6
- Termination Type:SMD
- Max Voltage Vds:30V
- Max Voltage Vgs th:1.5V
- Min Voltage Vgs th:0.5V
- On State Resistance @ Vgs = 2.5V:42mohm
- On State Resistance @ Vgs = 4.5V:30mohm
- Power Dissipation Pd:1.25W
- Pulse Current Idm:18A
- Transistor Case Style:TSMT6
Weitere Produktangebote RTQ045N03TR nach Preis ab 0.39 EUR bis 1.41 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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RTQ045N03TR | Rohm Semiconductor |
 Description: MOSFET N-CH 30V 4.5A TSMT6Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RTQ045N03TR | ROHM Semiconductor |
MOSFETs N-CH 30V 4.5A TSMT6 |
auf Bestellung 2132 Stücke: Lieferzeit 10-14 Tag (e) |
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RTQ045N03TR | Rohm Semiconductor |
Description: MOSFET N-CH 30V 4.5A TSMT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT6 (SC-95) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V |
auf Bestellung 5473 Stücke: Lieferzeit 10-14 Tag (e) |
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| RTQ045N03TR | ROHM |
SOT163 |
auf Bestellung 18938 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| RTQ045N03TR | |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
| RTQ045N03TR | |
Hersteller: ROHM Semiconductor
MOSFETs N-CH 30V 4.5A TSMT6
MOSFETs N-CH 30V 4.5A TSMT6
auf Bestellung 2132 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.32 EUR |
| 10+ | 0.97 EUR |
| 100+ | 0.66 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |
| 3000+ | 0.42 EUR |
| 6000+ | 0.39 EUR |
| RTQ045N03TR | |
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
Description: MOSFET N-CH 30V 4.5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 10 V
auf Bestellung 5473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.41 EUR |
| 17+ | 1.04 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.52 EUR |
| RTQ045N03TR | |
Hersteller: ROHM
SOT163
SOT163
auf Bestellung 18938 Stücke:
Lieferzeit 21-28 Tag (e)
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