auf Bestellung 7525 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 1.42 EUR |
| 10+ | 1.26 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.72 EUR |
| 1000+ | 0.61 EUR |
| 3000+ | 0.55 EUR |
| 6000+ | 0.52 EUR |
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Technische Details RTR020N05TL ROHM Semiconductor
Description: MOSFET N-CH 45V 2A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V.
Weitere Produktangebote RTR020N05TL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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RTR020N05TL | Hersteller : ROHM |
 Description: ROHM - RTR020N05TL - Leistungs-MOSFET, niedrige Gate-Schwellenspannung, n-Kanal, 45 V, 2 A, 0.25 ohm, TSMTtariffCode: 85412900 Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.25ohm |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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RTR020N05TL | Hersteller : ROHM |
Description: ROHM - RTR020N05TL - Leistungs-MOSFET, niedrige Gate-Schwellenspannung, n-Kanal, 45 V, 2 A, 0.25 ohm, TSMT tariffCode: 85412900 Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.25ohm |
auf Bestellung 297 Stücke: Lieferzeit 14-21 Tag (e) |
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| RTR020N05TL | Hersteller : ROHM SEMICONDUCTOR |
RTR020N05TL SMD N channel transistors |
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RTR020N05TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
Produkt ist nicht verfügbar |
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RTR020N05TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 2A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 10 V |
Produkt ist nicht verfügbar |