RTR020P02HZGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET P-CH 20V 2A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.44 EUR |
| 9000+ | 0.4 EUR |
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Technische Details RTR020P02HZGTL Rohm Semiconductor
Description: MOSFET P-CH 20V 2A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RTR020P02HZGTL nach Preis ab 0.43 EUR bis 1.23 EUR
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RTR020P02HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 20V 2A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 135mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 14524 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR020P02HZGTL | Hersteller : ROHM Semiconductor |
MOSFET Pch -20V -2A Small Signal MOSFET. RTR020P02HZG is the high reliability Automotive MOSFET, suitable for switching application. |
auf Bestellung 6014 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR020P02HZGTL | Hersteller : ROHM |
Description: ROHM - RTR020P02HZGTL - Leistungs-MOSFET, p-Kanal, 20 V, 2 A, 0.1 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.1ohm |
auf Bestellung 6271 Stücke: Lieferzeit 14-21 Tag (e) |
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RTR020P02HZGTL | Hersteller : ROHM |
Description: ROHM - RTR020P02HZGTL - Leistungs-MOSFET, p-Kanal, 20 V, 2 A, 0.1 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 2A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 1W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.1ohm |
auf Bestellung 6271 Stücke: Lieferzeit 14-21 Tag (e) |