RTR025N05HZGTL Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 45V 2.5A TSMT3
Packaging: Tape & Reel (TR)
Package / Case: SC-96
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: TSMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 45 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.36 EUR |
| 6000+ | 0.34 EUR |
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Technische Details RTR025N05HZGTL Rohm Semiconductor
Description: MOSFET N-CH 45V 2.5A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: TSMT3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 45 V, Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RTR025N05HZGTL nach Preis ab 0.33 EUR bis 1.06 EUR
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RTR025N05HZGTL | Hersteller : ROHM Semiconductor |
MOSFET Nch 45V 2.5A Small Signal MOSFET for Automotive. RTR025N05HZG is a low on-resistance MOSFET for automotive, suitable for swithing applications. |
auf Bestellung 2369 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR025N05HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 45V 2.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 130mOhm @ 2.5A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: TSMT3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 45 V Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 6264 Stücke: Lieferzeit 10-14 Tag (e) |
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RTR025N05HZGTL | Hersteller : ROHM |
Description: ROHM - RTR025N05HZGTL - Leistungs-MOSFET, n-Kanal, 45 V, 2.5 A, 0.095 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TSMT Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.095ohm |
auf Bestellung 1459 Stücke: Lieferzeit 14-21 Tag (e) |
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RTR025N05HZGTL | Hersteller : ROHM |
Description: ROHM - RTR025N05HZGTL - Leistungs-MOSFET, n-Kanal, 45 V, 2.5 A, 0.095 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 45V rohsCompliant: YES Dauer-Drainstrom Id: 2.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TSMT Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.095ohm |
auf Bestellung 1459 Stücke: Lieferzeit 14-21 Tag (e) |