RU1C002UNTCL Rohm Semiconductor
auf Bestellung 7994 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1909+ | 0.077 EUR |
| 1920+ | 0.073 EUR |
| 2243+ | 0.061 EUR |
| 3000+ | 0.055 EUR |
| 6000+ | 0.05 EUR |
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Technische Details RU1C002UNTCL Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA UMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-85, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: UMT3F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V.
Weitere Produktangebote RU1C002UNTCL nach Preis ab 0.07 EUR bis 0.49 EUR
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RU1C002UNTCL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 20V 200MA UMT3FPackaging: Tape & Reel (TR) Package / Case: SC-85 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UMT3F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
auf Bestellung 19140 Stücke: Lieferzeit 10-14 Tag (e) |
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RU1C002UNTCL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH Si 20V 0.2A 3-Pin UMTF T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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RU1C002UNTCL | Hersteller : ROHM Semiconductor |
MOSFETs Trans MOSFET N-CH 20V 0.2A |
auf Bestellung 7178 Stücke: Lieferzeit 10-14 Tag (e) |
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RU1C002UNTCL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 200MA UMT3F Packaging: Cut Tape (CT) Package / Case: SC-85 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: UMT3F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
auf Bestellung 21626 Stücke: Lieferzeit 10-14 Tag (e) |
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