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RU1E002SPTCL

RU1E002SPTCL Rohm Semiconductor


datasheet?p=RU1E002SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 250MA UMT3F
Packaging: Tape & Reel (TR)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.094 EUR
9000+ 0.091 EUR
Mindestbestellmenge: 3000
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Technische Details RU1E002SPTCL Rohm Semiconductor

Description: MOSFET P-CH 30V 250MA UMT3F, Packaging: Tape & Reel (TR), Package / Case: SC-85, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 250mA (Ta), Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V, Power Dissipation (Max): 200mW (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: UMT3F, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V.

Weitere Produktangebote RU1E002SPTCL nach Preis ab 0.11 EUR bis 0.86 EUR

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Preis ohne MwSt
RU1E002SPTCL RU1E002SPTCL Hersteller : Rohm Semiconductor datasheet?p=RU1E002SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 30V 250MA UMT3F
Packaging: Cut Tape (CT)
Package / Case: SC-85
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 250mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: UMT3F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 10 V
auf Bestellung 13881 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
33+0.55 EUR
46+ 0.48 EUR
100+ 0.23 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 33
RU1E002SPTCL RU1E002SPTCL Hersteller : ROHM Semiconductor datasheet?p=RU1E002SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 4V Drive Pch MOSFET Drive Pch
auf Bestellung 30500 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
61+0.86 EUR
73+ 0.72 EUR
137+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.17 EUR
3000+ 0.15 EUR
9000+ 0.11 EUR
Mindestbestellmenge: 61
RU1E002SPTCL Hersteller : ROHM SEMICONDUCTOR datasheet?p=RU1E002SP&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RU1E002SPTCL SMD P channel transistors
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