RUC002N05HZGT116 Rohm Semiconductor
auf Bestellung 3804 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1128+ | 0.14 EUR |
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Technische Details RUC002N05HZGT116 Rohm Semiconductor
Description: MOSFET N-CH 50V 200MA SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: SST3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RUC002N05HZGT116 nach Preis ab 0.073 EUR bis 0.58 EUR
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RUC002N05HZGT116 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 50V 0.2A Automotive 3-Pin SOT-23 T/R |
auf Bestellung 14410 Stücke: Lieferzeit 14-21 Tag (e) |
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RUC002N05HZGT116 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1154 Stücke: Lieferzeit 21-28 Tag (e) |
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RUC002N05HZGT116 | Hersteller : ROHM Semiconductor |
MOSFET Nch 50V Vds 0.2A 2.4Rds(on) SOT-23 |
auf Bestellung 240789 Stücke: Lieferzeit 14-28 Tag (e) |
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| RUC002N05HZGT116 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Pulsed drain current: 800A Power dissipation: 0.35W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 50V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SST3 On-state resistance: 7.2Ω Gate-source voltage: ±8V Mounting: SMD Anzahl je Verpackung: 20 Stücke |
Produkt ist nicht verfügbar |
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RUC002N05HZGT116 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 50V 200MA SST3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SST3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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| RUC002N05HZGT116 | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 200mA; Idm: 800A; 350mW; SST3 Pulsed drain current: 800A Power dissipation: 0.35W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhanced Drain-source voltage: 50V Type of transistor: N-MOSFET Kind of package: reel; tape Case: SST3 On-state resistance: 7.2Ω Gate-source voltage: ±8V Mounting: SMD |
Produkt ist nicht verfügbar |