RUE002N02TL Rohm Semiconductor
auf Bestellung 54519 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1884+ | 0.08 EUR |
| 2137+ | 0.07 EUR |
| 2233+ | 0.06 EUR |
| 3000+ | 0.06 EUR |
| 12000+ | 0.05 EUR |
| 24000+ | 0.05 EUR |
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Technische Details RUE002N02TL Rohm Semiconductor
Description: MOSFET N-CH 20V 200MA EMT3, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V, Power Dissipation (Max): 150mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: EMT3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V.
Weitere Produktangebote RUE002N02TL nach Preis ab 0.07 EUR bis 0.62 EUR
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RUE002N02TL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 20V 200MA EMT3Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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RUE002N02TL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH Si 20V 0.2A 3-Pin EMT T/R |
auf Bestellung 29900 Stücke: Lieferzeit 14-21 Tag (e) |
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RUE002N02TL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH Si 20V 0.2A 3-Pin EMT T/R |
auf Bestellung 6647 Stücke: Lieferzeit 14-21 Tag (e) |
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RUE002N02TL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 200MA EMT3 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 200mA, 2.5V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: EMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 10 V |
auf Bestellung 23161 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RUE002N02TL | Hersteller : ROHM Semiconductor |
MOSFETs Sm Signal, Sw MOSFET N Chan, 20V, 0.2A |
Produkt ist nicht verfügbar |