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RUF025N02FRATL

RUF025N02FRATL ROHM Semiconductor

datasheet?p=RUF025N02FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
MOSFET Nch 20V Vds 2.5A 0.08Rds(on) 5Qg
auf Bestellung 5769 Stücke:
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5+0.68 EUR
10+0.59 EUR
100+0.44 EUR
500+0.34 EUR
1000+0.27 EUR
3000+0.24 EUR
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Technische Details RUF025N02FRATL ROHM Semiconductor

Description: MOSFET N-CH 20V 2.5A TUMT3, Packaging: Tape & Reel (TR), Package / Case: 3-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 800mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: TUMT3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote RUF025N02FRATL nach Preis ab 0.3 EUR bis 1.04 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
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RUF025N02FRATL RUF025N02FRATL Hersteller : Rohm Semiconductor datasheet?p=RUF025N02FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 2877 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
27+0.66 EUR
100+0.43 EUR
500+0.33 EUR
1000+0.3 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
RUF025N02FRATL RUF025N02FRATL Hersteller : Rohm Semiconductor datasheet?p=RUF025N02FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CH 20V 2.5A TUMT3
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: TUMT3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 10 V
Qualification: AEC-Q101
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RUF025N02FRATL Hersteller : ROHM SEMICONDUCTOR datasheet?p=RUF025N02FRA&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.5A; Idm: 5A; 800mW; TUMT3
Case: TUMT3
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 5nC
On-state resistance: 0.16Ω
Power dissipation: 0.8W
Drain current: 2.5A
Pulsed drain current: 5A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Polarisation: unipolar
Kind of package: reel; tape
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