RUR040N02HZGTL Rohm Semiconductor
auf Bestellung 3335 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 343+ | 0.42 EUR |
| 344+ | 0.4 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.28 EUR |
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Technische Details RUR040N02HZGTL Rohm Semiconductor
Description: MOSFET N-CH 20V 4A TSMT3, Packaging: Tape & Reel (TR), Package / Case: SC-96, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: TSMT3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote RUR040N02HZGTL nach Preis ab 0.38 EUR bis 1.83 EUR
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RUR040N02HZGTL | Hersteller : Rohm Semiconductor |
 Description: MOSFET N-CH 20V 4A TSMT3Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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RUR040N02HZGTL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 20V 4A Automotive AEC-Q101 3-Pin TSMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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RUR040N02HZGTL | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 20V 4A Automotive AEC-Q101 3-Pin TSMT T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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RUR040N02HZGTL | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: TSMT3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5886 Stücke: Lieferzeit 10-14 Tag (e) |
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RUR040N02HZGTL | Hersteller : ROHM Semiconductor |
MOSFETs Automotive Nch 20V 4A Small Signal MOSFET. RUR040N02HZG is a MOSFET for switching applications. This is a high-reliability product of automotive grade qualified to AEC-Q101. |
auf Bestellung 1959 Stücke: Lieferzeit 10-14 Tag (e) |
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RUR040N02HZGTL | Hersteller : ROHM |
Description: ROHM - RUR040N02HZGTL - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.035 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TSMT Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2477 Stücke: Lieferzeit 14-21 Tag (e) |
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RUR040N02HZGTL | Hersteller : ROHM |
Description: ROHM - RUR040N02HZGTL - Leistungs-MOSFET, n-Kanal, 20 V, 4 A, 0.025 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TSMT Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2645 Stücke: Lieferzeit 14-21 Tag (e) |