RV2C010UNT2L Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET N-CH 20V 1A DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: VML1006
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 8000+ | 0.14 EUR |
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Technische Details RV2C010UNT2L Rohm Semiconductor
Description: MOSFET N-CH 20V 1A DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: VML1006, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V.
Weitere Produktangebote RV2C010UNT2L nach Preis ab 0.13 EUR bis 0.68 EUR
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RV2C010UNT2L | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 20V 1A 3-Pin VML T/R |
auf Bestellung 7580 Stücke: Lieferzeit 14-21 Tag (e) |
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RV2C010UNT2L | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 20V 1A 3-Pin VML T/R |
auf Bestellung 15500 Stücke: Lieferzeit 14-21 Tag (e) |
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RV2C010UNT2L | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 20V 1A 3-Pin VML T/R |
auf Bestellung 663 Stücke: Lieferzeit 14-21 Tag (e) |
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RV2C010UNT2L | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CH 20V 1A DFN1006-3 Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: VML1006 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V |
auf Bestellung 10310 Stücke: Lieferzeit 10-14 Tag (e) |
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RV2C010UNT2L | Hersteller : ROHM Semiconductor |
MOSFET 20V 1A Nch Power MOSFET |
auf Bestellung 183869 Stücke: Lieferzeit 10-14 Tag (e) |
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| RV2C010UNT2L | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| RV2C010UNT2L | Hersteller : ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |