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RV2C014BCT2CL

RV2C014BCT2CL Rohm Semiconductor


datasheet?p=RV2C014BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 20V 700MA DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 24000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.15 EUR
16000+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 8000
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Technische Details RV2C014BCT2CL Rohm Semiconductor

Description: MOSFET P-CH 20V 700MA DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 700mA (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 1.4A, 4.5V, Power Dissipation (Max): 400mW (Ta), Vgs(th) (Max) @ Id: 1V @ 100µA, Supplier Device Package: DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V.

Weitere Produktangebote RV2C014BCT2CL nach Preis ab 0.14 EUR bis 0.64 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
RV2C014BCT2CL RV2C014BCT2CL Hersteller : Rohm Semiconductor datasheet?p=RV2C014BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET P-CH 20V 700MA DFN1006-3
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.4A, 4.5V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
auf Bestellung 36987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
43+0.41 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
RV2C014BCT2CL RV2C014BCT2CL Hersteller : ROHM Semiconductor datasheet?p=RV2C014BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFETs P-Chnl -20V Vdss -/+1.4A Id RASMID
auf Bestellung 15547 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.64 EUR
10+0.43 EUR
100+0.22 EUR
1000+0.18 EUR
8000+0.14 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
RV2C014BCT2CL Hersteller : ROHM SEMICONDUCTOR datasheet?p=RV2C014BC&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RV2C014BCT2CL SMD P channel transistors
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