| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.57 EUR |
| 10+ | 1.39 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.84 EUR |
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Technische Details RV4E031RPHZGTCR1 ROHM Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Part Status: Active, Supplier Device Package: DFN1616-6W, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 6-PowerWFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RV4E031RPHZGTCR1 nach Preis ab 0.7 EUR bis 2.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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RV4E031RPHZGTCR1 | Rohm Semiconductor |
 Description: MOSFET P-CH 30V 3.1A DFN1616-6WQualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Part Status: Active Supplier Device Package: DFN1616-6W Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-PowerWFDFN Packaging: Cut Tape (CT) |
auf Bestellung 5601 Stücke: Lieferzeit 10-14 Tag (e) |
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| RV4E031RPHZGTCR1 |
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Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: DFN1616-6W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 3.1A DFN1616-6W
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: DFN1616-6W
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerWFDFN
Packaging: Cut Tape (CT)
auf Bestellung 5601 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.43 EUR |
| 14+ | 1.52 EUR |
| 100+ | 1 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.7 EUR |