auf Bestellung 2974 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.32 EUR |
| 10+ | 1.17 EUR |
| 100+ | 0.90 EUR |
| 500+ | 0.71 EUR |
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Technische Details RV4E031RPHZGTCR1 ROHM Semiconductor
Description: MOSFET P-CH 30V 3.1A DFN1616-6W, Packaging: Tape & Reel (TR), Package / Case: 6-PowerWFDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: DFN1616-6W, Grade: Automotive, Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote RV4E031RPHZGTCR1 nach Preis ab 0.59 EUR bis 2.04 EUR
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RV4E031RPHZGTCR1 | Hersteller : Rohm Semiconductor |
 Description: MOSFET P-CH 30V 3.1A DFN1616-6WPackaging: Cut Tape (CT) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-6W Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 5601 Stücke: Lieferzeit 10-14 Tag (e) |
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RV4E031RPHZGTCR1 | Hersteller : Rohm Semiconductor |
Description: MOSFET P-CH 30V 3.1A DFN1616-6W Packaging: Tape & Reel (TR) Package / Case: 6-PowerWFDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.1A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: DFN1616-6W Grade: Automotive Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Qualification: AEC-Q101 |
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