RV5C040APTCR1 Rohm Semiconductor

Description: MOSFET P-CH 20V 4A DFN1616-6, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -8V, 0V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Part Status: Active, Supplier Device Package: DFN1616-8S, Vgs(th) (Max) @ Id: 1V @ 1mA, Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 85mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerWFDFN, Packaging: Tape & Reel (TR).