RV7L020GNTCR1 Rohm Semiconductor

Description: NCH 60V 2A MIDDLE POWER MOSFET :, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 157mOhm @ 2A, 10V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 2.7V @ 50µA, Supplier Device Package: DFN1212-3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V.