RW1A030APT2CR ROHM Semiconductor

Description: MOSFET P-CH 12V 3A 6WEMT, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 42mOhm @ 3A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: 6-WEMT, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 6 V.