RW1E014SNT2R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CH 30V 1.4A WEMT6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V
Power Dissipation (Max): 400mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: 6-WEMT
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V
| Anzahl | Privatkunde |
|---|---|
| 46+ | 0.46 EUR |
| 67+ | 0.31 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.14 EUR |
| 2000+ | 0.13 EUR |
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Technische Details RW1E014SNT2R Rohm Semiconductor
Description: MOSFET N-CH 30V 1.4A WEMT6, Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 6-WEMT, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 400mW (Ta), Rds On (Max) @ Id, Vgs: 240mOhm @ 1.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-SMD, Flat Leads, Packaging: Tape & Reel (TR).
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RW1E014SNT2R | ROHM Semiconductor |
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auf Bestellung 7938 Stücke: Lieferzeit 10-14 Tag (e) |
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| RW1E014SNT2R |
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Hersteller: ROHM Semiconductor
MOSFET 4V Drive Nch MOSFET Drive Nch
MOSFET 4V Drive Nch MOSFET Drive Nch
auf Bestellung 7938 Stücke:
Lieferzeit 10-14 Tag (e)