RW4C045BCTCL1 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: PCH -20V -4.5A POWER MOSFET: RW4
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.44 EUR |
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Technische Details RW4C045BCTCL1 Rohm Semiconductor
Description: PCH -20V -4.5A POWER MOSFET: RW4, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: DFN1616-7T, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V.
Weitere Produktangebote RW4C045BCTCL1 nach Preis ab 0.46 EUR bis 1.83 EUR
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RW4C045BCTCL1 | Hersteller : ROHM Semiconductor |
MOSFETs DFN1616 P CHAN 20V |
auf Bestellung 5879 Stücke: Lieferzeit 10-14 Tag (e) |
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RW4C045BCTCL1 | Hersteller : Rohm Semiconductor |
Description: PCH -20V -4.5A POWER MOSFET: RW4 Packaging: Cut Tape (CT) Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: DFN1616-7T Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V |
auf Bestellung 30787 Stücke: Lieferzeit 10-14 Tag (e) |
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