RW4C045BCTCL1 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: PCH -20V -4.5A POWER MOSFET: RW4
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
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Technische Details RW4C045BCTCL1 Rohm Semiconductor
Description: PCH -20V -4.5A POWER MOSFET: RW4, Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: DFN1616-7T, Vgs(th) (Max) @ Id: 1.5V @ 1mA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerUFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote RW4C045BCTCL1 nach Preis ab 0.43 EUR bis 2.18 EUR
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RW4C045BCTCL1 | ROHM Semiconductor |
MOSFETs DFN1616 P-CH 20V 4.5A |
auf Bestellung 5759 Stücke: Lieferzeit 10-14 Tag (e) |
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RW4C045BCTCL1 | Rohm Semiconductor |
Description: PCH -20V -4.5A POWER MOSFET: RW4 Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: DFN1616-7T Vgs(th) (Max) @ Id: 1.5V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUFDFN Packaging: Cut Tape (CT) |
auf Bestellung 30787 Stücke: Lieferzeit 10-14 Tag (e) |
|
| RW4C045BCTCL1 |
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Hersteller: ROHM Semiconductor
MOSFETs DFN1616 P-CH 20V 4.5A
MOSFETs DFN1616 P-CH 20V 4.5A
auf Bestellung 5759 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.8 EUR |
| 10+ | 1.23 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.62 EUR |
| 1000+ | 0.56 EUR |
| 3000+ | 0.44 EUR |
| 6000+ | 0.43 EUR |
| RW4C045BCTCL1 |
|
Hersteller: Rohm Semiconductor
Description: PCH -20V -4.5A POWER MOSFET: RW4
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Cut Tape (CT)
Description: PCH -20V -4.5A POWER MOSFET: RW4
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN1616-7T
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Cut Tape (CT)
auf Bestellung 30787 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.18 EUR |
| 15+ | 1.44 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.68 EUR |