RW4E045AJTCL1 Rohm Semiconductor

Description: NCH 30V 4.5A POWER MOSFET: RW4E0, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: DFN1616-7T, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V.