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RW4E045AJTCL1

RW4E045AJTCL1 Rohm Semiconductor

rw4e045ajtcl-e.pdf Hersteller: Rohm Semiconductor
Description: NCH 30V 4.5A POWER MOSFET: RW4E0
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.87 EUR
12+ 1.52 EUR
100+ 1.18 EUR
500+ 1 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
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Technische Details RW4E045AJTCL1 Rohm Semiconductor

Description: NCH 30V 4.5A POWER MOSFET: RW4E0, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 1mA, Supplier Device Package: DFN1616-7T, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V.

Weitere Produktangebote RW4E045AJTCL1 nach Preis ab 1.17 EUR bis 2.02 EUR

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Preis ohne MwSt
RW4E045AJTCL1 RW4E045AJTCL1 Hersteller : ROHM Semiconductor rw4e045ajtcl-e.pdf MOSFET MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.02 EUR
10+ 1.81 EUR
100+ 1.41 EUR
500+ 1.17 EUR
Mindestbestellmenge: 2
RW4E045AJTCL1 RW4E045AJTCL1 Hersteller : Rohm Semiconductor rw4e045ajtcl-e.pdf Description: NCH 30V 4.5A POWER MOSFET: RW4E0
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
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