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RW4E065GNTCL1

RW4E065GNTCL1 Rohm Semiconductor

datasheet?p=RW4E065GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
11+1.65 EUR
14+ 1.35 EUR
100+ 1.05 EUR
500+ 0.89 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 11
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Technische Details RW4E065GNTCL1 Rohm Semiconductor

Description: NCH 30V 6.5A, HEML1616L7, POWER, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUFDFN, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: DFN1616-7T, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V.

Weitere Produktangebote RW4E065GNTCL1 nach Preis ab 0.66 EUR bis 1.69 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
RW4E065GNTCL1 RW4E065GNTCL1 Hersteller : ROHM Semiconductor datasheet?p=RW4E065GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET Nch 30V 6.5A, HEML1616L7, Power MOSFET.
auf Bestellung 2888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.69 EUR
10+ 1.37 EUR
100+ 1.07 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
3000+ 0.69 EUR
6000+ 0.66 EUR
Mindestbestellmenge: 2
RW4E065GNTCL1 RW4E065GNTCL1 Hersteller : Rohm Semiconductor datasheet?p=RW4E065GN&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
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