
RX2L10BBGC7G Rohm Semiconductor

Description: NCH 60V 180A, TO-220FP, POWER MO
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-220FM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
2+ | 9.52 EUR |
30+ | 5.43 EUR |
120+ | 4.52 EUR |
510+ | 3.86 EUR |
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Technische Details RX2L10BBGC7G Rohm Semiconductor
Description: NCH 60V 180A, TO-220FP, POWER MO, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Ta), 105A (Tc), Rds On (Max) @ Id, Vgs: 1.84mOhm @ 90A, 10V, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220FM, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V.
Weitere Produktangebote RX2L10BBGC7G nach Preis ab 5.77 EUR bis 5.77 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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RX2L10BBGC7G | Hersteller : Rohm Semiconductor |
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auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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RX2L10BBGC7G | Hersteller : ROHM Semiconductor |
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