RX3G18BGNC16 Rohm Semiconductor
auf Bestellung 197 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 4 EUR |
| 50+ | 3.46 EUR |
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Technische Details RX3G18BGNC16 Rohm Semiconductor
Description: NCH 40V 180A, TO-220AB, POWER MO, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1.64mOhm @ 90A, 10V, Power Dissipation (Max): 125W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V.
Weitere Produktangebote RX3G18BGNC16 nach Preis ab 5.22 EUR bis 11.6 EUR
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RX3G18BGNC16 | Hersteller : Rohm Semiconductor |
 Trans MOSFET N-CH 40V 180A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 969 Stücke: Lieferzeit 14-21 Tag (e) |
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RX3G18BGNC16 | Hersteller : ROHM Semiconductor |
MOSFET Nch 40V 180A, TO-220AB, Power MOSFET. |
auf Bestellung 864 Stücke: Lieferzeit 10-14 Tag (e) |
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RX3G18BGNC16 | Hersteller : Rohm Semiconductor |
Description: NCH 40V 180A, TO-220AB, POWER MO Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 1.64mOhm @ 90A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V |
auf Bestellung 2905 Stücke: Lieferzeit 10-14 Tag (e) |
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