RX3R05BBHC16 Rohm Semiconductor
auf Bestellung 530 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 4.51 EUR |
| 250+ | 3.85 EUR |
| 500+ | 2.49 EUR |
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Technische Details RX3R05BBHC16 Rohm Semiconductor
Description: NCH 150V 50A, TO-220AB, POWER MO, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 25A, 10V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V.
Weitere Produktangebote RX3R05BBHC16 nach Preis ab 2.14 EUR bis 6.6 EUR
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RX3R05BBHC16 | Hersteller : Rohm Semiconductor |
 Description: NCH 150V 50A, TO-220AB, POWER MOPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 25A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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RX3R05BBHC16 | Hersteller : Rohm Semiconductor |
Trans MOSFET N-CH 150V 50A 3-Pin(3+Tab) TO-220AB T/R |
auf Bestellung 413 Stücke: Lieferzeit 14-21 Tag (e) |
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RX3R05BBHC16 | Hersteller : ROHM Semiconductor |
MOSFETs Transistor, MOSFET Nch, 150V(Vdss), 50A(Id), (6.0V, 10V Drive) |
auf Bestellung 1838 Stücke: Lieferzeit 10-14 Tag (e) |
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