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RYC002N05T316

RYC002N05T316 Rohm Semiconductor


datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
auf Bestellung 30000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.19 EUR
9000+ 0.17 EUR
Mindestbestellmenge: 3000
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Technische Details RYC002N05T316 Rohm Semiconductor

Description: MOSFET N-CHANNEL 50V 200MA SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V, Power Dissipation (Max): 350mW (Tc), Vgs(th) (Max) @ Id: 800mV @ 1mA, Supplier Device Package: SST3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V.

Weitere Produktangebote RYC002N05T316 nach Preis ab 0.21 EUR bis 0.93 EUR

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Preis ohne MwSt
RYC002N05T316 RYC002N05T316 Hersteller : Rohm Semiconductor datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
auf Bestellung 36739 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
42+ 0.62 EUR
100+ 0.31 EUR
500+ 0.28 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 30
RYC002N05T316 RYC002N05T316 Hersteller : ROHM Semiconductor datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key MOSFET 0.9V Drive Nch Si MOSFET
auf Bestellung 42799 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
57+0.93 EUR
74+ 0.7 EUR
119+ 0.44 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
3000+ 0.21 EUR
Mindestbestellmenge: 57
RYC002N05T316 datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RYC002N05T316 Hersteller : ROHM SEMICONDUCTOR datasheet?p=RYC002N05&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key RYC002N05T316 SMD N channel transistors
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