RYC002N05T316 Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
Description: MOSFET N-CHANNEL 50V 200MA SST3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 800mV @ 1mA
Supplier Device Package: SST3
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.19 EUR |
9000+ | 0.17 EUR |
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Technische Details RYC002N05T316 Rohm Semiconductor
Description: MOSFET N-CHANNEL 50V 200MA SST3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V, Power Dissipation (Max): 350mW (Tc), Vgs(th) (Max) @ Id: 800mV @ 1mA, Supplier Device Package: SST3, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 50 V, Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V.
Weitere Produktangebote RYC002N05T316 nach Preis ab 0.21 EUR bis 0.93 EUR
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RYC002N05T316 | Hersteller : Rohm Semiconductor |
Description: MOSFET N-CHANNEL 50V 200MA SST3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 2.2Ohm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 800mV @ 1mA Supplier Device Package: SST3 Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 26 pF @ 10 V |
auf Bestellung 36739 Stücke: Lieferzeit 21-28 Tag (e) |
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RYC002N05T316 | Hersteller : ROHM Semiconductor | MOSFET 0.9V Drive Nch Si MOSFET |
auf Bestellung 42799 Stücke: Lieferzeit 14-28 Tag (e) |
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RYC002N05T316 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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RYC002N05T316 | Hersteller : ROHM SEMICONDUCTOR | RYC002N05T316 SMD N channel transistors |
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