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RZQ050P01TR

RZQ050P01TR Rohm Semiconductor

RZQ050P01_Rev002_4-6-17.pdf Hersteller: Rohm Semiconductor
Description: MOSFET P-CH 12V 5A TSMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
15+ 1.75 EUR
Mindestbestellmenge: 13
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Technische Details RZQ050P01TR Rohm Semiconductor

Description: MOSFET P-CH 12V 5A TSMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1V @ 1mA, Supplier Device Package: TSMT6 (SC-95), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V.

Weitere Produktangebote RZQ050P01TR nach Preis ab 0.7 EUR bis 2.06 EUR

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RZQ050P01TR RZQ050P01TR Hersteller : ROHM Semiconductor ROHM_S_A0009016316_1-2562909.pdf MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -5A
auf Bestellung 2206 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.06 EUR
30+ 1.78 EUR
100+ 1.54 EUR
1000+ 1.31 EUR
3000+ 0.78 EUR
6000+ 0.74 EUR
9000+ 0.7 EUR
Mindestbestellmenge: 26
RZQ050P01TR RZQ050P01_Rev002_4-6-17.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
RZQ050P01TR RZQ050P01TR Hersteller : Rohm Semiconductor RZQ050P01_Rev002_4-6-17.pdf Description: MOSFET P-CH 12V 5A TSMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 5A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: TSMT6 (SC-95)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 6 V
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