S1M1000170J SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4.1A
Pulsed drain current: 15A
Power dissipation: 100W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 3.73 EUR |
| 22+ | 3.36 EUR |
| 23+ | 3.12 EUR |
| 25+ | 2.92 EUR |
| 50+ | 2.83 EUR |
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Technische Details S1M1000170J SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 4.1A, Pulsed drain current: 15A, Power dissipation: 100W, Case: D2PAK-7, Gate-source voltage: -5...20V, On-state resistance: 1.9Ω, Mounting: SMD, Gate charge: 10nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S1M1000170J nach Preis ab 2.83 EUR bis 3.73 EUR
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S1M1000170J | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 4.1A Pulsed drain current: 15A Power dissipation: 100W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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S1M1000170J | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 4.1A Pulsed drain current: 15A Power dissipation: 100W Case: D2PAK-7 Gate-source voltage: -5...20V On-state resistance: 1.9Ω Mounting: SMD Gate charge: 10nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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