S1M1000170J SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 4.1A, Power dissipation: 100W, Case: D2PAK-7, Gate-source voltage: -5...20V, On-state resistance: 1.9Ω, Mounting: SMD, Gate charge: 10nC, Kind of channel: enhancement, Pulsed drain current: 15A, Features of semiconductor devices: Kelvin terminal, Kind of package: tube.