S1M1000170J SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Case: D2PAK-7
Mounting: SMD
Kind of package: tube
On-state resistance: 1.9Ω
Drain current: 4.1A
Pulsed drain current: 15A
Drain-source voltage: 1.7kV
Power dissipation: 100W
Technology: SiC
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 10nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 7.15 EUR |
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Technische Details S1M1000170J SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W, Case: D2PAK-7, Mounting: SMD, Kind of package: tube, On-state resistance: 1.9Ω, Drain current: 4.1A, Pulsed drain current: 15A, Drain-source voltage: 1.7kV, Power dissipation: 100W, Technology: SiC, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate-source voltage: -5...20V, Gate charge: 10nC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S1M1000170J nach Preis ab 7.15 EUR bis 7.15 EUR
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S1M1000170J | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W Case: D2PAK-7 Mounting: SMD Kind of package: tube On-state resistance: 1.9Ω Drain current: 4.1A Pulsed drain current: 15A Drain-source voltage: 1.7kV Power dissipation: 100W Technology: SiC Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 10nC |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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