S1M1000170J

S1M1000170J SMC DIODE SOLUTIONS


pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D8309CADDD60DC&compId=S1M1000170J.pdf?ci_sign=19316e24a6f61705f91262108cdf81ccbae7040c Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4.1A
Pulsed drain current: 15A
Power dissipation: 100W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
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Technische Details S1M1000170J SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.7kV, Drain current: 4.1A, Pulsed drain current: 15A, Power dissipation: 100W, Case: D2PAK-7, Gate-source voltage: -5...20V, On-state resistance: 1.9Ω, Mounting: SMD, Gate charge: 10nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote S1M1000170J

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S1M1000170J S1M1000170J Hersteller : SMC DIODE SOLUTIONS pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D8309CADDD60DC&compId=S1M1000170J.pdf?ci_sign=19316e24a6f61705f91262108cdf81ccbae7040c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4.1A
Pulsed drain current: 15A
Power dissipation: 100W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S1M1000170J S1M1000170J Hersteller : SMC DIODE SOLUTIONS pVersion=0046&contRep=ZT&docId=005056AB281E1FD085D8309CADDD60DC&compId=S1M1000170J.pdf?ci_sign=19316e24a6f61705f91262108cdf81ccbae7040c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.7kV
Drain current: 4.1A
Pulsed drain current: 15A
Power dissipation: 100W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 1.9Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
S1M1000170J Hersteller : SMC DIODE SOLUTIONS Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 4.1A; Idm: 15A; 100W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH