Produkte > INFINEON TECHNOLOGIES > S29GL256S11TFVV10

S29GL256S11TFVV10 Infineon Technologies

Infineon-S29GL01GS_S29GL512S_S29GL256S_S29GL128S_128_Mb_256_Mb_512_Mb_1_Gb_GL-S_MIRRORBIT_TM_Flash_Parallel_3-DataSheet-v22_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5

Hersteller: Infineon Technologies
Description: PNOR
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR (SLC)
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 60ns
Memory Interface: CFI
Access Time: 110 ns
Memory Organization: 256Mb (16M x 16)

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Technische Details S29GL256S11TFVV10 Infineon Technologies

Description: PNOR, Packaging: Tray, Package / Case: 56-TFSOP (0.724", 18.40mm Width), Mounting Type: Surface Mount, Memory Size: 256Mbit, Memory Type: Non-Volatile, Operating Temperature: -40°C ~ 105°C (TA), Voltage - Supply: 2.7V ~ 3.6V, Technology: FLASH - NOR (SLC), Memory Format: FLASH, Supplier Device Package: 56-TSOP, Write Cycle Time - Word, Page: 60ns, Memory Interface: CFI, Access Time: 110 ns, Memory Organization: 256Mb (16M x 16).