S2M0025120J SMC DIODE SOLUTIONS

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 70A; Idm: 250A; 311W, Mounting: SMD, Features of semiconductor devices: Kelvin terminal, Case: TO263-7, Power dissipation: 311W, Technology: SiC, Kind of package: reel; tape, Gate charge: 177nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 250A, Drain-source voltage: 1.2kV, Drain current: 70A, On-state resistance: 25mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Anzahl je Verpackung: 800 Stücke.