S2M0040120K-1 SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 55A
Pulsed drain current: 160A
Power dissipation: 320.5W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 118nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
| Anzahl | Preis |
|---|---|
| 4+ | 22.08 EUR |
| 5+ | 19.92 EUR |
| 10+ | 17.53 EUR |
| 30+ | 15.69 EUR |
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Technische Details S2M0040120K-1 SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 55A, Pulsed drain current: 160A, Power dissipation: 320.5W, Case: TO247-4, Gate-source voltage: -5...20V, On-state resistance: 40mΩ, Mounting: THT, Gate charge: 118nC, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal.