S2M0040120K-1 SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 320.5W
Technology: SiC
Kind of package: tube
Gate charge: 118nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Case: TO247-4
Power dissipation: 320.5W
Technology: SiC
Kind of package: tube
Gate charge: 118nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 160A
Drain-source voltage: 1.2kV
Drain current: 55A
On-state resistance: 40mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 16.13 EUR |
| 300+ | 15.59 EUR |
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Technische Details S2M0040120K-1 SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W, Mounting: THT, Features of semiconductor devices: Kelvin terminal, Case: TO247-4, Power dissipation: 320.5W, Technology: SiC, Kind of package: tube, Gate charge: 118nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 160A, Drain-source voltage: 1.2kV, Drain current: 55A, On-state resistance: 40mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S2M0040120K-1 nach Preis ab 16.13 EUR bis 16.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||
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| S2M0040120K-1 | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 55A; Idm: 160A; 320.5W Mounting: THT Features of semiconductor devices: Kelvin terminal Case: TO247-4 Power dissipation: 320.5W Technology: SiC Kind of package: tube Gate charge: 118nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 160A Drain-source voltage: 1.2kV Drain current: 55A On-state resistance: 40mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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