S2M0080120J SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 37A; Idm: 82A; 234W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TO263-7
Power dissipation: 234W
Technology: SiC
Kind of package: reel; tape
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 82A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 800 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 37A; Idm: 82A; 234W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TO263-7
Power dissipation: 234W
Technology: SiC
Kind of package: reel; tape
Gate charge: 54nC
Kind of channel: enhanced
Gate-source voltage: -5...20V
Pulsed drain current: 82A
Drain-source voltage: 1.2kV
Drain current: 37A
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Anzahl je Verpackung: 800 Stücke
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Technische Details S2M0080120J SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 37A; Idm: 82A; 234W, Mounting: SMD, Features of semiconductor devices: Kelvin terminal, Case: TO263-7, Power dissipation: 234W, Technology: SiC, Kind of package: reel; tape, Gate charge: 54nC, Kind of channel: enhanced, Gate-source voltage: -5...20V, Pulsed drain current: 82A, Drain-source voltage: 1.2kV, Drain current: 37A, On-state resistance: 77mΩ, Type of transistor: N-MOSFET, Polarisation: unipolar, Anzahl je Verpackung: 800 Stücke.
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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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S2M0080120J | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 37A; Idm: 82A; 234W Mounting: SMD Features of semiconductor devices: Kelvin terminal Case: TO263-7 Power dissipation: 234W Technology: SiC Kind of package: reel; tape Gate charge: 54nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 82A Drain-source voltage: 1.2kV Drain current: 37A On-state resistance: 77mΩ Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |