S2M0080120N SMC Diode Solutions
Hersteller: SMC Diode SolutionsDescription: MOSFET SILICON CARBIDE SIC 1200V
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V
Power Dissipation (Max): 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 10mA
Supplier Device Package: SOT-227
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V
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Technische Details S2M0080120N SMC Diode Solutions
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Bulk, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 20V, Power Dissipation (Max): 176W (Tc), Vgs(th) (Max) @ Id: 4V @ 10mA, Supplier Device Package: SOT-227, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1324 pF @ 1000 V.
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S2M0080120N | Hersteller : SMC DIODE SOLUTIONS |
Category: Transistor modules MOSFET Description: Module; single transistor; 1.2kV; 25A; SOT227B; screw; Idm: 82A Type of semiconductor module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 1.2kV Drain current: 25A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 137mΩ Pulsed drain current: 82A Power dissipation: 176W Technology: SiC Kind of channel: enhancement Gate-source voltage: -5...20V Features of semiconductor devices: Kelvin terminal Mechanical mounting: screw |
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