S2M0080120T SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 82A
Power dissipation: 231W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 29A
Pulsed drain current: 82A
Power dissipation: 231W
Case: TOLL
Gate-source voltage: -5...20V
On-state resistance: 137mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.65 EUR |
| 18+ | 4.19 EUR |
| 100+ | 3.7 EUR |
| 250+ | 3.35 EUR |
| 900+ | 3.2 EUR |
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Technische Details S2M0080120T SMC DIODE SOLUTIONS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 29A, Pulsed drain current: 82A, Power dissipation: 231W, Case: TOLL, Gate-source voltage: -5...20V, On-state resistance: 137mΩ, Mounting: SMD, Gate charge: 54nC, Kind of package: reel; tape, Kind of channel: enhancement, Features of semiconductor devices: Kelvin terminal, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S2M0080120T nach Preis ab 4.19 EUR bis 4.65 EUR
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S2M0080120T | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 29A; Idm: 82A; 231W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 29A Pulsed drain current: 82A Power dissipation: 231W Case: TOLL Gate-source voltage: -5...20V On-state resistance: 137mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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