S2M0120120K SMC DIODE SOLUTIONS

Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 13.3A, 20V, Power Dissipation (Max): 156W (Tc), Vgs(th) (Max) @ Id: 4V @ 3.3mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 29.6 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 652 pF @ 1000 V.