S2M0160120K SMC DIODE SOLUTIONS
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 4.46 EUR |
| 17+ | 4.2 EUR |
| 600+ | 2.62 EUR |
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Technische Details S2M0160120K SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 2.5mA, Supplier Device Package: TO-247-4, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V.
Weitere Produktangebote S2M0160120K nach Preis ab 6.38 EUR bis 9.4 EUR
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| S2M0160120K | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 196mOhm @ 10A, 20V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 2.5mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 1000 V |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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