S3D06065I SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 2.4V
Max. forward impulse current: 700A
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 18+ | 4.06 EUR |
| 28+ | 2.65 EUR |
| 47+ | 1.54 EUR |
| 50+ | 1.46 EUR |
| 1000+ | 1.43 EUR |
| 2000+ | 1.40 EUR |
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Technische Details S3D06065I SMC DIODE SOLUTIONS
Description: DIODE SIL CARB 650V 6A TO220, Packaging: Tube, Package / Case: TO-220-2 Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 382pF @ 0V, 1MHz, Current - Average Rectified (Io): 6A, Supplier Device Package: TO-220-Isolation, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A, Current - Reverse Leakage @ Vr: 8 µA @ 650 V.
Weitere Produktangebote S3D06065I nach Preis ab 1.46 EUR bis 4.66 EUR
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S3D06065I | Hersteller : SMC DIODE SOLUTIONS |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ISO; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220ISO Max. forward voltage: 2.4V Max. forward impulse current: 700A Kind of package: tube |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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S3D06065I | Hersteller : SMC Diode Solutions |
Description: DIODE SIL CARB 650V 6A TO220 Packaging: Tube Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 382pF @ 0V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220-Isolation Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 8 µA @ 650 V |
auf Bestellung 816 Stücke: Lieferzeit 10-14 Tag (e) |
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