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| Anzahl | Preis |
|---|---|
| 24+ | 3.05 EUR |
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Technische Details S3D08065I SMC DIODE SOLUTIONS
Description: DIODE SILICON 650V 27A TO220, Packaging: Tube, Package / Case: TO-220-2 Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 650pF @ 0V, 1MHz, Current - Average Rectified (Io): 27A, Supplier Device Package: TO-220-Isolation, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 650 V.
Weitere Produktangebote S3D08065I
| Foto | Bezeichnung | Hersteller | Beschreibung |
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S3D08065I | Hersteller : SMC Diode Solutions |
 Description: DIODE SILICON 650V 27A TO220Packaging: Tube Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 650pF @ 0V, 1MHz Current - Average Rectified (Io): 27A Supplier Device Package: TO-220-Isolation Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 650 V |
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