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| Anzahl | Preis |
|---|---|
| 11+ | 6.81 EUR |
| 16+ | 4.5 EUR |
| 17+ | 4.26 EUR |
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Technische Details S3D20065D1 SMC DIODE SOLUTIONS
Description: DIODE SIL CARB 650V 20A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1190pF @ 0V, 1MHz, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-247AD, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Current - Reverse Leakage @ Vr: 60 µA @ 650 V.
Weitere Produktangebote S3D20065D1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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S3D20065D1 | Hersteller : SMC Diode Solutions |
Description: DIODE SIL CARB 650V 20A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1190pF @ 0V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Current - Reverse Leakage @ Vr: 60 µA @ 650 V |
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