S3D20065D1 SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-3,TO247AD
Case: TO247-3; TO247AD
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Max. forward voltage: 2.4V
Load current: 20A
Max. forward impulse current: 102A
Max. off-state voltage: 650V
Semiconductor structure: single diode
| Anzahl | Privatkunde |
|---|---|
| 13+ | 6.89 EUR |
| 14+ | 6.2 EUR |
| 25+ | 5.85 EUR |
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Technische Details S3D20065D1 SMC DIODE SOLUTIONS
Description: DIODE SIL CARB 650V 20A TO247AD, Current - Reverse Leakage @ Vr: 60 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-247AD, Current - Average Rectified (Io): 20A, Capacitance @ Vr, F: 1190pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote S3D20065D1
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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S3D20065D1 | SMC Diode Solutions |
Description: DIODE SIL CARB 650V 20A TO247AD Current - Reverse Leakage @ Vr: 60 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Part Status: Active Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-247AD Current - Average Rectified (Io): 20A Capacitance @ Vr, F: 1190pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
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Im Einkaufswagen Stück im Wert von UAH |
| S3D20065D1 |
|
Hersteller: SMC Diode Solutions
Description: DIODE SIL CARB 650V 20A TO247AD
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: DIODE SIL CARB 650V 20A TO247AD
Current - Reverse Leakage @ Vr: 60 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247AD
Current - Average Rectified (Io): 20A
Capacitance @ Vr, F: 1190pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH