S3JHE3_A/I Vishay General Semiconductor - Diodes Division
                                                Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE GEN PURP 600V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 38500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis | 
|---|---|
| 3500+ | 0.25 EUR | 
| 7000+ | 0.24 EUR | 
| 10500+ | 0.22 EUR | 
| 24500+ | 0.21 EUR | 
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Technische Details S3JHE3_A/I Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2.5 µs, Technology: Standard, Capacitance @ Vr, F: 60pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101. 
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        S3JHE3_A/I | Hersteller : Vishay General Semiconductor - Diodes Division | 
            
                         Description: DIODE GEN PURP 600V 3A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.5 µs Technology: Standard Capacitance @ Vr, F: 60pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101  | 
        
                             auf Bestellung 52646 Stücke: Lieferzeit 10-14 Tag (e) | 
        
            
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        S3JHE3_A/I | Hersteller : Vishay General Semiconductor | 
            
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