S3M0016120D SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Mounting: THT
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 287nC
On-state resistance: 25mΩ
Power dissipation: 732W
Drain current: 85A
Pulsed drain current: 250A
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Mounting: THT
Case: TO247-3
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 287nC
On-state resistance: 25mΩ
Power dissipation: 732W
Drain current: 85A
Pulsed drain current: 250A
Drain-source voltage: 1.2kV
Anzahl je Verpackung: 1 Stücke
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 14.21 EUR |
| 7+ | 11.18 EUR |
| 30+ | 10.77 EUR |
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Technische Details S3M0016120D SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Mounting: THT, Case: TO247-3, Kind of package: tube, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Gate-source voltage: -4...18V, Gate charge: 287nC, On-state resistance: 25mΩ, Power dissipation: 732W, Drain current: 85A, Pulsed drain current: 250A, Drain-source voltage: 1.2kV, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S3M0016120D nach Preis ab 11.18 EUR bis 14.21 EUR
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S3M0016120D | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W Mounting: THT Case: TO247-3 Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Gate-source voltage: -4...18V Gate charge: 287nC On-state resistance: 25mΩ Power dissipation: 732W Drain current: 85A Pulsed drain current: 250A Drain-source voltage: 1.2kV |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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