S3M0016120D SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 732W
Polarisation: unipolar
Kind of package: tube
Gate charge: 287nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Drain-source voltage: 1.2kV
Drain current: 85A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 732W
Polarisation: unipolar
Kind of package: tube
Gate charge: 287nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 250A
Mounting: THT
Case: TO247-3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 14.34 EUR |
| 7+ | 11.2 EUR |
| 30+ | 10.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details S3M0016120D SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Drain-source voltage: 1.2kV, Drain current: 85A, On-state resistance: 25mΩ, Type of transistor: N-MOSFET, Power dissipation: 732W, Polarisation: unipolar, Kind of package: tube, Gate charge: 287nC, Technology: SiC, Kind of channel: enhancement, Gate-source voltage: -4...18V, Pulsed drain current: 250A, Mounting: THT, Case: TO247-3, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S3M0016120D nach Preis ab 11.2 EUR bis 14.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
S3M0016120D | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W Drain-source voltage: 1.2kV Drain current: 85A On-state resistance: 25mΩ Type of transistor: N-MOSFET Power dissipation: 732W Polarisation: unipolar Kind of package: tube Gate charge: 287nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 250A Mounting: THT Case: TO247-3 |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
|