S3M0016120D SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 287nC
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 85A
Pulsed drain current: 250A
Power dissipation: 732W
Case: TO247-3
Gate-source voltage: -4...18V
On-state resistance: 25mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 287nC
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 14.21 EUR |
| 7+ | 11.2 EUR |
| 30+ | 10.77 EUR |
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Technische Details S3M0016120D SMC DIODE SOLUTIONS
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 85A, Pulsed drain current: 250A, Power dissipation: 732W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 25mΩ, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Gate charge: 287nC, Technology: SiC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote S3M0016120D nach Preis ab 11.2 EUR bis 14.21 EUR
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S3M0016120D | Hersteller : SMC DIODE SOLUTIONS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 85A Pulsed drain current: 250A Power dissipation: 732W Case: TO247-3 Gate-source voltage: -4...18V On-state resistance: 25mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 287nC Technology: SiC |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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