S3M0016120D SMC DIODE SOLUTIONS

Category: THT N channel transistors, Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 85A; Idm: 250A; 732W, Type of transistor: N-MOSFET, Technology: SiC, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 85A, Power dissipation: 732W, Case: TO247-3, Gate-source voltage: -4...18V, On-state resistance: 16mΩ, Mounting: THT, Gate charge: 287nC, Kind of channel: enhancement, Pulsed drain current: 250A, Kind of package: tube.