S3M0040120T SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W
Mounting: SMD
Features of semiconductor devices: Kelvin terminal
Case: TOLL
Kind of package: reel; tape
Drain-source voltage: 1.2kV
Drain current: 46A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Power dissipation: 130W
Polarisation: unipolar
Gate charge: 143nC
Technology: SiC
Kind of channel: enhancement
Gate-source voltage: -4...18V
Pulsed drain current: 223A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 11.91 EUR |
| 10+ | 7.15 EUR |
| 250+ | 4.55 EUR |
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Technische Details S3M0040120T SMC DIODE SOLUTIONS
Description: MOSFET SILICON CARBIDE SIC 1200V, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 65A (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V, Power Dissipation (Max): 130W (Tc), Vgs(th) (Max) @ Id: 4V @ 16mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -8V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V.
Weitere Produktangebote S3M0040120T nach Preis ab 11.83 EUR bis 22.33 EUR
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S3M0040120T | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 223A; 130W Mounting: SMD Features of semiconductor devices: Kelvin terminal Case: TOLL Kind of package: reel; tape Drain-source voltage: 1.2kV Drain current: 46A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 130W Polarisation: unipolar Gate charge: 143nC Technology: SiC Kind of channel: enhancement Gate-source voltage: -4...18V Pulsed drain current: 223A |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| S3M0040120T | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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| S3M0040120T | Hersteller : SMC Diode Solutions |
Description: MOSFET SILICON CARBIDE SIC 1200V Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiC (Silicon Carbide Junction Transistor) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 18V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4V @ 16mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -8V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2844 pF @ 1000 V |
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