S4D10120G0 SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONSCategory: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; reel,tape
Type of diode: Schottky rectifying
Case: D2PAK
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Kind of package: reel; tape
Technology: SiC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 2.39 EUR |
| 38+ | 1.89 EUR |
| 200+ | 1.12 EUR |
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Produktbewertung abgeben
Technische Details S4D10120G0 SMC DIODE SOLUTIONS
Description: DIODE SCHOTTKY SILICON CARBIDE S, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 772pF @ 0V, 1MHz, Current - Average Rectified (Io): 30A, Supplier Device Package: TO-263-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A, Current - Reverse Leakage @ Vr: 30 µA @ 1200 V.
Weitere Produktangebote S4D10120G0 nach Preis ab 2.39 EUR bis 2.39 EUR
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S4D10120G0 | Hersteller : SMC DIODE SOLUTIONS |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; reel,tape Type of diode: Schottky rectifying Case: D2PAK Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Semiconductor structure: single diode Kind of package: reel; tape Technology: SiC |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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S4D10120G0 | Hersteller : SMC Diode Solutions |
Description: DIODE SCHOTTKY SILICON CARBIDE S Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
Produkt ist nicht verfügbar |
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S4D10120G0 | Hersteller : SMC Diode Solutions |
Description: DIODE SCHOTTKY SILICON CARBIDE S Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 772pF @ 0V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Current - Reverse Leakage @ Vr: 30 µA @ 1200 V |
Produkt ist nicht verfügbar |