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S6D10065I SMC DIODE SOLUTIONS

S6D10065A%20S6D10065F%20S6D10065E%20S6D10065G%20S6D10065I%20S6D10065D1%20N2568%20REV.-.pdf Hersteller: SMC DIODE SOLUTIONS
S6D10065I-SMC THT Schottky diodes
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38+1.93 EUR
1000+1.86 EUR
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Technische Details S6D10065I SMC DIODE SOLUTIONS

Description: DIODE SCHOTTKY SILICON CARBIDE S, Packaging: Tube, Package / Case: TO-220-2 Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 769pF @ 0V, 1MHz, Current - Average Rectified (Io): 33A, Supplier Device Package: TO-220-Isolation, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.

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S6D10065I S6D10065I Hersteller : SMC Diode Solutions S6D10065A%20S6D10065F%20S6D10065E%20S6D10065G%20S6D10065I%20S6D10065D1%20N2568%20REV.-.pdf Description: DIODE SCHOTTKY SILICON CARBIDE S
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 769pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-Isolation
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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