S6D10065I SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 40uA
Max. off-state voltage: 650V
Max. forward voltage: 1.6V
Load current: 10A
Max. forward impulse current: 80A
Case: TO220ISO
Semiconductor structure: single diode
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 40µA
Power dissipation: 103W
Max. load current: 33A
| Anzahl | Privatkunde |
|---|---|
| 17+ | 5.18 EUR |
| 25+ | 3.44 EUR |
| 50+ | 2.8 EUR |
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Technische Details S6D10065I SMC DIODE SOLUTIONS
Description: DIODE SCHOTTKY SILICON CARBIDE S, Packaging: Tube, Package / Case: TO-220-2 Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 769pF @ 0V, 1MHz, Current - Average Rectified (Io): 33A, Supplier Device Package: TO-220-Isolation, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote S6D10065I
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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S6D10065I | SMC Diode Solutions |
Description: DIODE SCHOTTKY SILICON CARBIDE S Packaging: Tube Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 769pF @ 0V, 1MHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-220-Isolation Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| S6D10065I |
|
Hersteller: SMC Diode Solutions
Description: DIODE SCHOTTKY SILICON CARBIDE S
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 769pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-Isolation
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SCHOTTKY SILICON CARBIDE S
Packaging: Tube
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 769pF @ 0V, 1MHz
Current - Average Rectified (Io): 33A
Supplier Device Package: TO-220-Isolation
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH