S6D10065I SMC DIODE SOLUTIONS
Hersteller: SMC DIODE SOLUTIONS
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ISO; Ir: 40uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ISO
Max. forward voltage: 1.6V
Max. load current: 33A
Max. forward impulse current: 80A
Kind of package: tube
Leakage current: 40µA
Power dissipation: 103W
| Anzahl | Preis |
|---|---|
| 17+ | 4.25 EUR |
| 26+ | 2.83 EUR |
| 50+ | 2.3 EUR |
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Technische Details S6D10065I SMC DIODE SOLUTIONS
Description: DIODE SCHOTTKY SILICON CARBIDE S, Packaging: Tube, Package / Case: TO-220-2 Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 769pF @ 0V, 1MHz, Current - Average Rectified (Io): 33A, Supplier Device Package: TO-220-Isolation, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
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S6D10065I | Hersteller : SMC Diode Solutions |
Description: DIODE SCHOTTKY SILICON CARBIDE S Packaging: Tube Package / Case: TO-220-2 Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 769pF @ 0V, 1MHz Current - Average Rectified (Io): 33A Supplier Device Package: TO-220-Isolation Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
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