S8CJHM3/I Vishay General Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.9 EUR |
| 10+ | 1.69 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.02 EUR |
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Technische Details S8CJHM3/I Vishay General Semiconductor
Description: DIODE GEN PURP 600V 8A DO214AB, Packaging: Tape & Reel (TR), Package / Case: DO-214AB, SMC, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Standard, Capacitance @ Vr, F: 79pF @ 4V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DO-214AB (SMC), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Qualification: AEC-Q101.
Weitere Produktangebote S8CJHM3/I nach Preis ab 0.67 EUR bis 2.81 EUR
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S8CJHM3/I | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 600V 8A DO214ABPackaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Standard Capacitance @ Vr, F: 79pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V Qualification: AEC-Q101 |
auf Bestellung 5150 Stücke: Lieferzeit 10-14 Tag (e) |
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S8CJHM3/I | Vishay Semiconductors |
Rectifiers 8A, 600V SMC AEC-Q101 Qualified |
auf Bestellung 3836 Stücke: Lieferzeit 10-14 Tag (e) |
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| S8CJHM3/I |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 600V 8A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 5150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.95 EUR |
| 17+ | 1.31 EUR |
| 100+ | 0.9 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.67 EUR |
| S8CJHM3/I |
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Hersteller: Vishay Semiconductors
Rectifiers 8A, 600V SMC AEC-Q101 Qualified
Rectifiers 8A, 600V SMC AEC-Q101 Qualified
auf Bestellung 3836 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.81 EUR |
| 10+ | 1.77 EUR |
| 100+ | 1.18 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.88 EUR |
| 3500+ | 0.77 EUR |
| 7000+ | 0.7 EUR |