SA2K-E3/5AT Vishay General Semiconductor
auf Bestellung 81197 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
57+ | 0.92 EUR |
81+ | 0.64 EUR |
197+ | 0.27 EUR |
1000+ | 0.17 EUR |
2500+ | 0.15 EUR |
7500+ | 0.14 EUR |
22500+ | 0.12 EUR |
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Technische Details SA2K-E3/5AT Vishay General Semiconductor
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 800V; 2A; 1.5us; SMA; Ufmax: 0.95V; Ifsm: 55A, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 0.8kV, Load current: 2A, Reverse recovery time: 1.5µs, Semiconductor structure: single diode, Features of semiconductor devices: glass passivated, Capacitance: 11pF, Max. forward voltage: 0.95V, Case: SMA, Kind of package: reel; tape, Leakage current: 90µA, Max. forward impulse current: 55A, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote SA2K-E3/5AT
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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SA2K-E3/5AT | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 2A; 1.5us; SMA; Ufmax: 0.95V; Ifsm: 55A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 2A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 11pF Max. forward voltage: 0.95V Case: SMA Kind of package: reel; tape Leakage current: 90µA Max. forward impulse current: 55A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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SA2K-E3/5AT | Hersteller : Vishay Semiconductor Diodes Division | Description: DIODE GEN PURP 800V 2A DO214AC |
Produkt ist nicht verfügbar |
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SA2K-E3/5AT | Hersteller : Vishay Semiconductors | Rectifiers 800 Volt 2.0 Amp 55 Amp IFSM |
Produkt ist nicht verfügbar |
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SA2K-E3/5AT | Hersteller : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 800V; 2A; 1.5us; SMA; Ufmax: 0.95V; Ifsm: 55A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.8kV Load current: 2A Reverse recovery time: 1.5µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 11pF Max. forward voltage: 0.95V Case: SMA Kind of package: reel; tape Leakage current: 90µA Max. forward impulse current: 55A |
Produkt ist nicht verfügbar |