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SBAS16LT3G

SBAS16LT3G onsemi


BAS16LT1_D-2310148.pdf Hersteller: onsemi
Diodes - General Purpose, Power, Switching SS SWCH DIO SPCL TR
auf Bestellung 22963 Stücke:

Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
127+0.41 EUR
177+ 0.29 EUR
417+ 0.12 EUR
1000+ 0.073 EUR
2500+ 0.07 EUR
10000+ 0.062 EUR
20000+ 0.052 EUR
Mindestbestellmenge: 127
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Technische Details SBAS16LT3G onsemi

Description: DIODE GP 100V 200MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 6 ns, Technology: Standard, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOT-23-3 (TO-236), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA, Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Qualification: AEC-Q101.

Weitere Produktangebote SBAS16LT3G nach Preis ab 0.068 EUR bis 0.42 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SBAS16LT3G SBAS16LT3G Hersteller : onsemi bas16lt1-d.pdf Description: DIODE GP 100V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5838 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
89+ 0.29 EUR
164+ 0.16 EUR
500+ 0.12 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
SBAS16LT3G SBAS16LT3G Hersteller : ONSEMI BAS16LT1G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
SBAS16LT3G SBAS16LT3G Hersteller : onsemi bas16lt1-d.pdf Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SBAS16LT3G SBAS16LT3G Hersteller : ONSEMI BAS16LT1G.PDF Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 200mA; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar