Produkte > ONSEMI > SBC847BPDW1T3G
SBC847BPDW1T3G

SBC847BPDW1T3G onsemi


bc846bpdw1t1-d.pdf Hersteller: onsemi
Description: TRAN NPN/PNP 45V 0.1A SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10000+0.1 EUR
Mindestbestellmenge: 10000
Produktrezensionen
Produktbewertung abgeben

Technische Details SBC847BPDW1T3G onsemi

Description: TRAN NPN/PNP 45V 0.1A SC88/SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 380mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote SBC847BPDW1T3G nach Preis ab 0.14 EUR bis 1.02 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SBC847BPDW1T3G SBC847BPDW1T3G Hersteller : onsemi bc846bpdw1t1-d.pdf Description: TRAN NPN/PNP 45V 0.1A SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13745 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.6 EUR
100+ 0.3 EUR
500+ 0.25 EUR
1000+ 0.18 EUR
2000+ 0.15 EUR
Mindestbestellmenge: 26
SBC847BPDW1T3G SBC847BPDW1T3G Hersteller : onsemi BC846BPDW1T1_D-2310186.pdf Bipolar Transistors - BJT NPN PNP Bipolar Transistor
auf Bestellung 5047 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
52+1.02 EUR
74+ 0.71 EUR
177+ 0.29 EUR
1000+ 0.18 EUR
2500+ 0.17 EUR
10000+ 0.15 EUR
20000+ 0.14 EUR
Mindestbestellmenge: 52
SBC847BPDW1T3G SBC847BPDW1T3G Hersteller : ONSEMI bc846bpdw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
SBC847BPDW1T3G SBC847BPDW1T3G Hersteller : ONSEMI bc846bpdw1t1-d.pdf Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: complementary pair
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar