SBC847BPDXV6T1G onsemi
Hersteller: onsemiDescription: TRANS NPN/PNP 45V 100MA SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-563
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4000+ | 0.14 EUR |
| 8000+ | 0.13 EUR |
| 12000+ | 0.12 EUR |
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Technische Details SBC847BPDXV6T1G onsemi
Description: TRANS NPN/PNP 45V 100MA SOT-563, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 357mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-563, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SBC847BPDXV6T1G nach Preis ab 0.14 EUR bis 0.79 EUR
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SBC847BPDXV6T1G | Hersteller : onsemi |
Bipolar Transistors - BJT SS SOT563 GP XSTR PNP 40V |
auf Bestellung 414480 Stücke: Lieferzeit 10-14 Tag (e) |
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SBC847BPDXV6T1G | Hersteller : onsemi |
Description: TRANS NPN/PNP 45V 100MA SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 357mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SOT-563 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 120356 Stücke: Lieferzeit 10-14 Tag (e) |
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| SBC847BPDXV6T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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| SBC847BPDXV6T1G | Hersteller : ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; complementary pair; 45V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: complementary pair Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.5W Case: SOT563 Current gain: 200...475 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |