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SBC856BDW1T3G

SBC856BDW1T3G onsemi


BC856BDW1T1_D-2310270.pdf Hersteller: onsemi
Bipolar Transistors - BJT SS GP XSTR PNP 65V
auf Bestellung 38714 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+0.28 EUR
15+0.19 EUR
100+0.10 EUR
1000+0.08 EUR
2500+0.07 EUR
10000+0.06 EUR
20000+0.05 EUR
Mindestbestellmenge: 11
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Technische Details SBC856BDW1T3G onsemi

Description: TRANS 2PNP 65V 100MA SC88/SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 380mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 65V, Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SC-88/SC70-6/SOT-363, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.

Weitere Produktangebote SBC856BDW1T3G nach Preis ab 0.07 EUR bis 0.39 EUR

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SBC856BDW1T3G SBC856BDW1T3G Hersteller : onsemi bc856bdw1t1-d.pdf Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
75+0.24 EUR
120+0.15 EUR
500+0.11 EUR
1000+0.10 EUR
2000+0.09 EUR
5000+0.07 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BDW1T3G SBC856BDW1T3G Hersteller : ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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SBC856BDW1T3G SBC856BDW1T3G Hersteller : ON Semiconductor bc856bdw1t1-d.pdf Trans GP BJT PNP 65V 0.1A 380mW Automotive 6-Pin SC-88 T/R
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SBC856BDW1T3G SBC856BDW1T3G Hersteller : ON Semiconductor bc856bdw1t1-d.pdf Trans GP BJT PNP 65V 0.2A 380mW Automotive 6-Pin SC-88 T/R
Produkt ist nicht verfügbar
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SBC856BDW1T3G SBC856BDW1T3G Hersteller : onsemi bc856bdw1t1-d.pdf Description: TRANS 2PNP 65V 100MA SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 65V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBC856BDW1T3G SBC856BDW1T3G Hersteller : ONSEMI bc856bdw1t1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 65V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH