Produkte > ONSEMI > SBC857BDW1T1G
SBC857BDW1T1G

SBC857BDW1T1G onsemi


bc856bdw1t1-d.pdf
Hersteller: onsemi
Description: TRANS 2PNP 45V 100MA SC88/SC70
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 42000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.054 EUR
9000+0.051 EUR
15000+0.047 EUR
21000+0.045 EUR
30000+0.043 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SBC857BDW1T1G onsemi

Description: TRANS 2PNP 45V 100MA SC88/SC70, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 380mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 45V, Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SBC857BDW1T1G nach Preis ab 0.053 EUR bis 0.5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SBC857BDW1T1G SBC857BDW1T1G onsemi BC856BDW1T1_D-1802503.pdf Bipolar Transistors - BJT SS GP XSTR PNP 45
auf Bestellung 29685 Stücke:
Lieferzeit 10-14 Tag (e)
10+0.3 EUR
16+0.18 EUR
100+0.11 EUR
500+0.084 EUR
1000+0.072 EUR
3000+0.06 EUR
6000+0.053 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SBC857BDW1T1G SBC857BDW1T1G onsemi bc856bdw1t1-d.pdf Description: TRANS 2PNP 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 42469 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
97+0.18 EUR
155+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SBC857BDW1T1G SBC857BDW1T1G ONSEMI BC85xBDW1T1.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
142+0.5 EUR
Mindestbestellmenge: 142
Im Einkaufswagen  Stück im Wert von  UAH
SBC857BDW1T1G BC856BDW1T1_D-1802503.pdf
SBC857BDW1T1G
Hersteller: onsemi
Bipolar Transistors - BJT SS GP XSTR PNP 45
auf Bestellung 29685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+0.3 EUR
16+0.18 EUR
100+0.11 EUR
500+0.084 EUR
1000+0.072 EUR
3000+0.06 EUR
6000+0.053 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
SBC857BDW1T1G bc856bdw1t1-d.pdf
SBC857BDW1T1G
Hersteller: onsemi
Description: TRANS 2PNP 45V 100MA SC88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 42469 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
97+0.18 EUR
155+0.11 EUR
500+0.083 EUR
1000+0.073 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
SBC857BDW1T1G BC85xBDW1T1.pdf
SBC857BDW1T1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 142 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
142+0.5 EUR
Mindestbestellmenge: 142
Im Einkaufswagen  Stück im Wert von  UAH