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SBC857BLT1G

SBC857BLT1G onsemi


bc856alt1-d.pdf Hersteller: onsemi
Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.1 EUR
6000+ 0.097 EUR
9000+ 0.093 EUR
Mindestbestellmenge: 3000
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Technische Details SBC857BLT1G onsemi

Description: TRANS PNP 45V 0.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA, Current - Collector Cutoff (Max): 15nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 45 V, Power - Max: 300 mW, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote SBC857BLT1G nach Preis ab 0.11 EUR bis 0.81 EUR

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SBC857BLT1G SBC857BLT1G Hersteller : onsemi BC856ALT1_D-2310425.pdf Bipolar Transistors - BJT SS GP XSTR PNP 45V
auf Bestellung 32536 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
66+0.8 EUR
87+ 0.6 EUR
153+ 0.34 EUR
1000+ 0.17 EUR
3000+ 0.15 EUR
9000+ 0.12 EUR
24000+ 0.11 EUR
Mindestbestellmenge: 66
SBC857BLT1G SBC857BLT1G Hersteller : onsemi bc856alt1-d.pdf Description: TRANS PNP 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 54370 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
33+0.81 EUR
47+ 0.56 EUR
100+ 0.28 EUR
500+ 0.23 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 33
SBC857BLT1G SBC857BLT1G Hersteller : ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
SBC857BLT1G SBC857BLT1G Hersteller : ONSEMI BC856_7_8.PDF Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 45V; 0.1A; 0.225/0.3W; SOT23
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225/0.3W
Case: SOT23
Current gain: 150...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar